AMAG nanometro

Chip-AMAG7 Hardmask LineSpace, 100 nm depth, L50P100 anchor target w/TiN anti-charge coating

AMAG7 LineSpace module etched into 100 nm SiO2 on Si, terminating on Si substrate. The anchor target is L50P100, downsized to L47P100.

Chip	27mm x 33mm
Process	AMAG7, L50P100 LineSpace, 100 nm depth, ALD 30A TiN coating
Stack	100 nm SiO2 on Si, lines etched in SiO2, terminate on Si substrate
Depth	100 nm
Pattern	AMAG7, Full Field, 27 mm x 33 mm, 66 die plus 10 partial die
Anchor target	L50P100 downsized to L47P100
Imaged targets	L50P100, L52P104, L55P110, L60P120, C120 Faux Memory
CD, Anchor Target	Bottom CD: ~47 nm
Reference metrology	Anchor target: CD measurements & images,all sites/wafer. 10 sites per wafer: CD & images of 4 secondary targets 2 XSEM images of profile from sister wafer Reports: "100nm depth oxide HM (L50P100) Line & Space, navigation & results": View PDF Report "100nm depth oxide HM (L50P100) Line & Space, with 30A ALD TiN Coating,navigation & results": View PDF Report

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