AMAG nanometro
AMAG7 Hardmask LineSpace, 100 nm depth, L50P100 anchor target
AMAG7 Hardmask LineSpace, 100 nm depth, L50P100 anchor target
AMAG7 LineSpace module etched into 100 nm SiO2 on Si, terminating on Si substrate. The anchor target is L50P100, downsized to L47P100.
| Wafer | 300 mm standard, 200 mm option available |
| Process | AMAG7, L50P100 LineSpace, 100 nm depth |
| Stack | 100 nm SiO2 on Si, lines etched in SiO2, terminate on Si substrate |
| Depth | 100 nm |
| Pattern | AMAG7, Full Field, 27 mm x 33 mm, 59 die |
| Anchor target | L50P100 downsized to L47P100 |
| Imaged targets | L50P100, L52P104, L55P110, L60P120, C120 Faux Memory |
| CD, Anchor Target | Bottom CD: ~47 nm |
| Reference metrology |
Anchor target: CD measurements & images,all sites/wafer. Reports: "100nm depth oxide HM (L50P100) Line & Space, navigation & results": "100nm depth oxide HM (L50P100) Line & Space with 30A ALD TiN Coating, navigation & results": |
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