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AMAG nanometro

AMAG7 HARhole, 1.0 µm depth, SiO2 on Si, C60P120 anchor target

AMAG7 HARhole, 1.0 µm depth, SiO2 on Si, C60P120 anchor target

AMAG7 hole/trench module etched into 1.0 µm deep SiO2 to achieve etched HAR hole and trench features, with holes terminating on Si substrate.  The anchor target is C60P120, but larger hole sizes also pattern successfully, along with larger trenches.

Wafer 300 mm standard, 200 mm option available
Process AMAG7 HARhole 1 µm depth
Stack 1000 nm SiO2 on Si, HARhole etched in SiO2, terminate on Si substrate
Depth 1000 nm
Pattern AMAG7A Darkfield chiplet, 59 die, 26 mm x 33 mm repeat distance
Anchor target C60P120
Imaged targets C60P120, C64P128, C70P140, C70P140HEX, C80P165MEM
CD, Anchor Target Bottom CD: ~50 nm, Top CD: ~70 nm
Reference metrology

Anchor target: CD measurements & images, all sites/wafer.
10 sites per wafer: CD & images of 4 secondary targets
2 XSEM images of profile from sister wafer

Link to PDF report of initial lot

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