AMAG nanometro
AMAG7 HARhole, 1.0 µm depth, SiO2 on Si, C60P120 anchor target
AMAG7 HARhole, 1.0 µm depth, SiO2 on Si, C60P120 anchor target
AMAG7 hole/trench module etched into 1.0 µm deep SiO2 to achieve etched HAR hole and trench features, with holes terminating on Si substrate. The anchor target is C60P120, but larger hole sizes also pattern successfully, along with larger trenches.
| Wafer | 300 mm standard, 200 mm option available |
| Process | AMAG7 HARhole 1 µm depth |
| Stack | 1000 nm SiO2 on Si, HARhole etched in SiO2, terminate on Si substrate |
| Depth | 1000 nm |
| Pattern | AMAG7A Darkfield chiplet, 59 die, 26 mm x 33 mm repeat distance |
| Anchor target | C60P120 |
| Imaged targets | C60P120, C64P128, C70P140, C70P140HEX, C80P165MEM |
| CD, Anchor Target | Bottom CD: ~50 nm, Top CD: ~70 nm |
| Reference metrology |
Anchor target: CD measurements & images, all sites/wafer. |
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