AMAG nanometro
AMAG7 Hardmask Holes, 100 nm depth SiO2 on Si, C60P120 anchor target
AMAG7 Hardmask Holes, 100 nm depth SiO2 on Si, C60P120 anchor target
AMAG7 hole/trench module etched into 100 nm deep SiO2, with holes terminating on Si substrate. The anchor target is C60P120, but larger hole sizes also pattern successfully, along with larger trenches.
| Wafer | 300 mm standard, 200 mm option available |
| Process | AMAG7 C60P120 holes 100 nm depth |
| Stack | 100 nm SiO2 on Si, holes etched in SiO2, terminate on Si substrate |
| Depth | 100 nm |
| Pattern | AMAG7, Full Field, 26 mm x 32 mm, 59 die |
| Anchor target | C60P120 |
| Imaged targets | C60P120, C64P128, C70P140, C70P140HEX, C80P165MEM |
| CD, Anchor Target | Bottom CD: ~60 nm, Top CD: ~70 nm |
| Reference metrology |
Anchor target: CD measurements & images, all sites/wafer. |
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