AMAG nanometro
AMAG6 HARhole, 1.0 µm depth, SiO2 on Si, C60P120 anchor target
AMAG6 HARhole, 1.0 µm depth, SiO2 on Si, C60P120 anchor target
AMAG6 hole/trench module etched into 1.0 µm deep SiO2 to achieve etched HAR hole and trench features, with holes terminating on Si substrate. The anchor target is C60P120, but larger hole sizes also pattern successfully, along with larger trenches. AMAG6 is an older SEMATECH reticle with a small collection of 150 um grating pads vs AMAG7's 547x 800 um pad sizes. Reference Metrology is C60P120 anchor target on all die, including CD measurements and images. 300 mm wafer size only. Minimum Order Size: 12 wafers.
| Process | AMAG6 HARhole 1 µm depth |
| Stack | 1000 nm SiO2 on Si, HARhole etched in SiO2, terminate on Si substrate |
| Depth | 1000 nm |
| Pattern | AMAG6V Via chiplet, manually bladed, 59 full-field 26 mm x 33 mm die |
| Anchor target | C60P120 |
| Imaged targets | C60P120 |
| CD, Anchor Target | Bottom CD: ~50 nm, Top CD: ~70 nm |
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