Validation to NIST’s VLSI standard
AMAG7 LineSpace Hardmask wafer is a full-wafer, fab-friendly conveyance of the NIST VLSI pitch standard.
AMAG7 LineSpace wafer SEM imaging was performed at NIST and validated to the NIST VLSI standard. AMAG7's 100 nm nominal pitch is 99.931 ± 0.073 nm.
A new option at AMAG nanomart is a 30 Å ALD (Atomic Layer Deposition) Ti-rich TiN overcoat for CD-SEM measurements, which offers specific advantages:
- Charging Mitigation: The Ti-rich TiN conformal coating (resistivity 700 µΩ-cm) is many orders of magnitude more conductive than the underlying SiO₂ or Si substrate (SiO₂ resistivity 1000 Ω-cm), eliminating the electric fields over the sample due to sample charging.
- Enhanced Image Resolution and Contrast: Thinner TiN overcoats enable higher-resolution imaging. This is particularly beneficial when measuring critical dimensions, as finer details can be resolved more clearly, leading to more accurate CD measurements.
- Compatibility with Metrology Standards: Some metrology standards and specifications may recommend or require specific TiN thicknesses for CD-SEM measurements. Using a 30 Å TiN overcoat can help ensure compliance with these standards.
- Surface Protection: The TiN layer acts as a protective barrier for the underlying oxide lines, reducing the risk of damage and contamination during SEM measurements. This ensures the longevity and accuracy of the measurements.
- Measurement Reproducibility: The conductive nature of the TiN overcoat contributes to consistent CD measurements across multiple scans. This helps maintain measurement reproducibility and supports process control efforts.
With or without TiN add-on, L50P100 LineSpace Hardmask wafers are in stock and ready to ship!